PAFSC5G35E37R9 Chiếc mạch tích hợp Chip Power Amplifier Module cho LTE và 5G

Chip mạch tích hợp
June 26, 2025
Kết nối danh mục: Chip mạch tích hợp
Brief: Discover the PAFSC5G35E37R9 Integrated Circuit Chip Power Amplifier Module, designed for LTE and 5G applications. This high-performance module features advanced LDMOS technology, offering exceptional power efficiency and linearity. Ideal for 5G small base stations and relay equipment, it operates in the 3400MHz to 3600MHz range with 45.8% efficiency and 34.5 dB power gain.
Related Product Features:
  • High-performance power amplifier module for 5G and LTE applications.
  • Advanced LDMOS process technology for excellent power efficiency and linearity.
  • Operates in the 3400MHz to 3600MHz frequency range, ideal for 5G NR n78 band.
  • Provides 45.8% efficiency and 34.5 dB power gain for superior signal amplification.
  • Typical P3dB output power of 44.8 dBm (30.2 W) with good linearity.
  • 28V standard operating voltage for balanced efficiency and complexity.
  • Integrated input and output impedance matching simplifies RF front-end design.
  • Optimized for LTE signals with excellent ACLR and EVM performance.
CÂU HỎI THƯỜNG GẶP:
  • What is the operating frequency range of the PAFSC5G35E37R9 module?
    The module operates in the 3400MHz to 3600MHz frequency range, suitable for 5G NR n78 band and some LTE bands.
  • What is the power efficiency of the PAFSC5G35E37R9 module?
    The module offers a high efficiency performance of 45.8%, significantly better than many similar products on the market.
  • What applications is the PAFSC5G35E37R9 module best suited for?
    It is ideal for 5G small base stations, relay equipment, and high-density network deployment scenarios due to its balanced performance in efficiency and linearity.