Blog về công ty Supply ON Gallium Nitride (GaN) Product:GaN FETs,GaN Integrated Power

Supply ON Gallium Nitride (GaN) Product:GaN FETs,GaN Integrated Power

Shenzhen Mingjiada Electronics Co., Ltd., as a specialist supplier with extensive experience in the distribution of electronic components, provides customers with high-quality products and services through stable supply chain resources, a rigorous quality control system and efficient service capabilities.

Supply Advantages

We maintain close cooperation with original equipment manufacturers and major distribution channels to ensure product authenticity and adequate stock levels. Furthermore, we offer both bulk purchasing and small-batch sampling services to meet our customers’ diverse procurement needs. All products supplied undergo rigorous quality testing; from supplier selection and incoming inspection to dispatch verification, every stage adheres to standardised procedures to eliminate counterfeit and substandard products, ensuring that every item received by the customer complies with the original manufacturer’s specifications and quality requirements.

I. Core Advantages of ON Semiconductor’s GaN Technology

Compared to traditional silicon MOSFETs, ON Semiconductor’s full range of GaN products, built on mature wide-bandgap processes and proprietary architectures, offers four core technical advantages that break through the performance bottlenecks of silicon-based devices at a fundamental level:

- Ultra-low switching losses and high-frequency performance: As the electron mobility of GaN is significantly higher than that of silicon, the devices feature extremely low gate charge and output charge, resulting in substantially improved switching speed. They support high-frequency operation in the MHz range, effectively reducing switching losses and making them suitable for high-frequency inverter and rectifier applications.

- Bidirectional conduction: Unlike the unidirectional conduction limitations of silicon-based devices, ON Semiconductor’s GaN devices possess inherent bidirectional conduction capability, enabling them to replace multiple traditional transistors, thereby simplifying circuit topologies and reducing the number of peripheral components.

- High power density and lightweight design: High-frequency operation significantly reduces the volume of magnetic components such as transformers, inductors and capacitors; combined with a compact packaging design, this substantially reduces the overall size and weight of equipment.

- Excellent thermal stability and reliability: GaN material offers superior resistance to high temperatures, high voltages and radiation. The devices feature low conduction losses and minimal heat generation, making them suitable for harsh industrial environments and high-load continuous operation in data centres, whilst delivering a longer service life.

II. ON Semiconductor GaN Field-Effect Transistors (GaN FETs)

Onsemi’s GaN field-effect transistors (GaN FETs) form the core of the GaNEXUS™ product portfolio. As discrete power devices, they cover the full range of mainstream voltage ratings from 40 V to 650 V, encompassing a complete series of low-voltage, medium-voltage and high-voltage models. They can be flexibly adapted to power electronics systems of varying power levels and topologies, balancing cost-effectiveness with peak performance, and are the preferred choice for general-purpose, high-efficiency power conversion.

1. Key Product Features

Onsemi GaN FETs utilise an enhancement-mode gallium nitride process and are normally-off devices. They are compatible with traditional silicon MOSFET drive logic, requiring no significant modifications to existing circuit designs and offering exceptional adaptability. The devices feature zero reverse recovery charge, completely eliminating the reverse recovery losses associated with traditional silicon devices, significantly reducing switching spikes and electromagnetic interference, and simplifying system EMC design. Furthermore, the products achieve extremely low on-resistance and gate charge, with an industry-leading Rds(on)×Qg ratio, maintaining exceptionally high conversion efficiency under both low and high load conditions.

Furthermore, the devices in this series feature controllable switching speeds and extremely low thermal resistance. Combined with optimised wafer and packaging processes, they offer excellent thermal performance, enabling long-term stable operation under high-frequency and high-load conditions. This effectively reduces system thermal management design costs and meets the thermal requirements of compact equipment.

2. Main Product Specifications and Classification

ON Semiconductor’s GaN FETs are precisely segmented by voltage rating, covering the full spectrum of consumer, industrial and new energy applications:

- 40V low-voltage GaN FETs: Designed for low-voltage, high-current applications, these are suitable for fast-charging power supplies, portable energy storage, low-voltage motor drives and low-voltage power distribution in servers. With ultra-low on-resistance, they significantly improve low-voltage power conversion efficiency and facilitate the miniaturisation of equipment.

- 100V–300V medium-voltage GaN FETs: Suitable for mid-range power applications such as industrial power supplies, PV micro-inverters, automotive low-voltage power supplies and telecommunications power supplies. They strike a balance between performance and cost, whilst ensuring both high-frequency performance and operational stability.

- 650V high-voltage GaN FETs: The core models in the series, suitable for high-voltage, high-power applications, including photovoltaic inverters, energy storage converters, charging points, AI data centre server power supplies and industrial high-frequency inverter equipment. They enable ultra-high power density conversion, significantly reducing the energy consumption of the entire system.

3. Core Application Scenarios

Thanks to their flexible selection and adaptation capabilities, discrete GaN FETs are widely used in various general-purpose power conversion scenarios: high-power fast charging for consumer electronics, portable energy storage power supplies, telecommunications base station power supplies, industrial switching power supplies, micro-PV inverters, automotive auxiliary power supplies, and motor variable-frequency drives. They are the core components for upgrading high-efficiency power supplies in the small-to-medium power range.

III. ON Semiconductor GaN Integrated Power Devices (Smart GaN FET)

Onsemi’s GaN integrated power devices are high-end, highly integrated products within the GaNEXUS™ series. Represented primarily by the 650V Smart GaN device, they overcome the design limitations of traditional discrete components by highly integrating a GaN FET, a dedicated gate driver, a complete set of protection circuits and monitoring circuits within a single package. This achieves the integrated combination of ‘power device + driver + protection’, providing a high-end power solution characterised by high reliability, high integration and high stability.

1. Integrated Architecture and Core Functions

Compared to discrete GaN FETs, these integrated power devices deliver comprehensive functional upgrades. The core integrated modules include: a high-precision dedicated gate driver chip, overcurrent protection, overvoltage protection, over-temperature protection, gate voltage stabilisation protection, and fault detection and feedback modules. The monolithic integrated architecture thoroughly resolves the pain points of traditional discrete solutions. It eliminates the need for external driver chips and protection circuits, significantly simplifying peripheral circuit design, reducing PCB routing complexity, and minimising interference from parasitic parameters, thereby enhancing system stability and immunity to interference at the hardware level.

Furthermore, the device incorporates precise temperature and current sensing capabilities, enabling real-time monitoring of operating conditions. Working in conjunction with the system’s main controller, it facilitates precise current limiting, overheating shutdown and fault alarms, effectively preventing device damage caused by abnormal operating conditions such as overloads, short circuits and high temperatures, whilst significantly enhancing operational safety and service life.

2. Key Product Advantages

- Extremely simplified system design: A single device replaces discrete GaN transistors, driver chips and protection components, reducing the number of components by over 30 per cent, shortening product R&D cycles and lowering procurement and assembly costs.

- Higher stability and consistency: The drive circuit and power device are optimised and matched by the original manufacturer; parasitic parameters are minimal and switching waveforms are smoother, eliminating drive matching deviations and routing interference issues common in discrete solutions, whilst ensuring excellent consistency in mass-produced products.

- Strong Adaptability to Harsh Operating Conditions: A comprehensive set of integrated protection mechanisms enables the device to withstand high-load, continuous-operation and complex electromagnetic environments typical of industrial, energy and data centre applications, with shock and interference resistance far exceeding that of discrete solutions.

- Higher Power Density: A compact, integrated package combined with high-frequency operation capabilities further reduces the overall size of equipment, meeting the design requirements of high-end, compact, high-power devices.

3. Core Application Scenarios

GaN integrated power devices are primarily targeted at high-end, high-power and high-reliability applications, serving key sectors such as AI data centres, new energy infrastructure and high-end industrial automation. These include: 48V high-voltage DC power supplies for data centres; high-power energy storage converters; on-board chargers and high-voltage power systems for new energy vehicles; high-end industrial inverters; high-power photovoltaic grid-connected inverters; and high-precision power systems for robots. They represent the core solution for upgrading high-end power electronic systems.

IV. Differentiation Between the Two Product Categories

GaN Field-Effect Transistors (FETs): Suitable for cost-sensitive applications requiring flexible circuit topologies and operating in small-to-medium power scenarios, such as consumer fast charging, portable energy storage, standard industrial power supplies and low-voltage motor drives. They are well-suited to customised circuit designs and offer significant value for money.

GaN integrated power devices: Suitable for applications requiring high reliability, high power, high integration and operation under harsh conditions, such as data centre power supplies, high-power new energy equipment, high-end industrial equipment and grid-connected energy equipment. They can significantly reduce R&D and O&M costs whilst enhancing system stability.