Recycle TI GaN Motor Drivers:GaN Intelligent Power Module,GaN Half-Bridge Driver
Shenzhen Mingjiada Electronics Co., Ltd. has specialised in the field of electronic component recycling for many years and is a professional provider of inventory management and recycling services within the industry. We purchase genuine original manufacturer products, obsolete stock, discontinued products and idle chips at highly competitive prices, helping businesses to rapidly reduce inventory, recover capital and minimise warehousing and management costs.
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Based on global market trends and taking into account model, batch, packaging, quantity and condition (original packaging/mounted on board/unmounted), we provide accurate quotes that are 10%–30% higher than those of our competitors.
No hidden fees; genuine OEM products (including those in original packaging or on pallets) will receive priority processing and higher quotes, whilst obsolete stock, discontinued orders and dismantled components will all be fairly priced.
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No quantity restrictions: from a single sample to bulk purchases of hundreds or tens of thousands of batches, we can meet all requirements;
No condition restrictions: we purchase brand-new, factory-sealed products, slow-moving stock, board-mounted/disassembled components and tested components;
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From stock categorisation → submission of lists → quotation → inspection → settlement → logistics, we provide full-process support to ensure you enjoy a hassle-free and efficient experience
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I. Core Technical Advantages of TI GaN Motor Drivers (Compared to Traditional Silicon-Based Solutions)
TI’s full range of GaN motor drivers utilises an enhanced GaN FET architecture, offering disruptive performance advantages over traditional silicon MOSFET drive solutions, which is the key to their suitability for high-end motor applications. Firstly, GaN devices have no reverse recovery charge, completely eliminating reverse recovery losses during high-frequency switching. Under operating conditions with a high switching frequency of 100 kHz, this can reduce system power losses by up to 50 per cent, with inverter efficiency exceeding 99 per cent, significantly reducing the thermal management demands on equipment and energy consumption costs. Secondly, the devices feature extremely low input capacitance and extremely fast switching speeds, supporting nanosecond-level switching. This significantly reduces drive dead-time and effectively suppresses motor current harmonics, resulting in smoother motor operation and lower noise levels.
At the same time, through a highly integrated design, TI has combined the gate driver, sampling circuit, protection logic and power devices into a single package, eliminating the need for the large number of peripheral components required by traditional discrete solutions. This reduces PCB footprint by more than 50 per cent, maximising system power density. Furthermore, the excellent high-frequency characteristics of GaN devices enable motor drive systems to increase their control bandwidth, achieving high-precision speed and torque control, making them ideally suited for high-end applications such as high-precision servos and high-speed motors.
II. TI GaN Intelligent Power Modules (GaN IPMs)
GaN Intelligent Power Modules (GaN IPMs) are TI’s integrated solutions designed for three-phase motor drive applications. Specifically engineered for three-phase synchronous and asynchronous motors used in industrial motors, smart home devices, power tools and drones, they highly integrate high-voltage GaN power transistors, gate driver circuits, current sensing, multi-level protection circuits and logic control units. These modules are core products that simplify three-phase motor drive design, shorten development cycles and enhance system reliability.
1. Key Product Model: DRV7308
The DRV7308 is TI’s flagship 650V high-voltage three-phase GaN intelligent power module and currently serves as the core component for industrial-grade medium-to-high-power motor drives, offering exceptional adaptability to operating conditions and a high degree of integration. The module integrates three independent GaN half-bridge power units, with a single-transistor on-resistance of just 205 mΩ. It supports high-voltage, high-power motor drives and is suitable for motor systems rated at 250 W and above, covering applications such as domestic variable-frequency appliances, light industrial robots and small-scale new energy equipment.
2. Core Functions and Technical Features
- Ultra-high integration, minimalist peripheral design: No external gate drivers, sampling resistors or protection chips are required. The module internally integrates a three-phase inverter full-power circuit, high-precision current sensing unit and dead-time control circuit. Users need only pair it with a main control MCU and a small number of external capacitors to complete a three-phase motor drive, significantly reducing hardware design complexity and PCB routing complexity.
- Comprehensive intelligent protection for enhanced system reliability: Built-in multi-level protection mechanisms, including overcurrent protection, overvoltage protection, undervoltage lockout, overheat protection and gate fault protection, enable real-time monitoring of the power circuit and device operating status. In the event of abnormal conditions, the power transistors are rapidly shut down to prevent device burnout, making the device suitable for complex industrial and demanding domestic applications.
- Ultimate energy efficiency and low-noise control: Leveraging the zero reverse recovery characteristic of GaN devices, high-frequency switching losses are significantly reduced, with inverter efficiency exceeding 99% under full load conditions; it also supports ultra-low dead-time configuration, effectively suppressing motor phase current distortion, reducing electromagnetic interference and operational noise, and enabling quiet and smooth motor operation.
- Wide operating condition adaptability: With a high voltage rating of 650V, it is suitable for high-voltage DC bus power supply scenarios and is compatible with various power supply methods, including 220V domestic mains rectification and high-voltage battery power. It features a wide temperature operating range and can operate stably in complex environments with both high and low temperatures.
3. Typical Application Scenarios
Primarily suited for driving three-phase brushless DC motors (BLDC) and permanent magnet synchronous motors (PMSM), covering high-end smart home appliances such as inverter-controlled air conditioners, washing machines and cooker hoods, as well as mid-to-high-end equipment including small industrial servo motors, collaborative robot joint motors, drone propulsion motors, high-power power tools and light electric vehicles.
III. TI GaN Half-Bridge Drivers
TI’s GaN half-bridge drivers are standardised power stage products designed for single-arm power conversion, single-phase motors, multi-channel distributed drive applications. Centred around a single half-bridge unit, these standardised power stage products integrate GaN power FETs with dedicated gate drivers. They offer flexible configuration, high-frequency performance and a compact form factor. They can be used individually for single-phase motor drives or combined in parallel to form three-phase or multi-phase drive systems, meeting diverse and lightweight motor drive requirements.
1. Key product model: DRV7167
The DRV7167 is TI’s flagship 100 V low-voltage, high-current GaN half-bridge power driver IC, designed specifically for low-voltage high-speed motors, servo drives and high-frequency power conversion applications. It integrates a complete half-bridge architecture comprising two 100 V enhancement-mode GaN FETs and a high-frequency gate driver, A single device can independently form a complete half-bridge drive circuit, supporting a maximum operating current of 60A, whilst balancing high-current output with high-frequency operation capabilities.
2. Core Functions and Technical Features
- High-frequency, high-performance operation with zero reverse recovery loss: The integrated GaN power devices exhibit no reverse recovery effect, completely resolving the issues of soaring losses and excessive heat generation associated with silicon-based half-bridge drivers during high-frequency operation. It supports high-frequency switching at several hundred kHz, significantly enhancing motor control accuracy and dynamic response speed.
- Integrated power stage, simplified architecture: The single chip integrates both the upper and lower GaN power devices and the drive circuitry, eliminating the need for external driver chips and power devices. The native half-bridge topology greatly simplifies the hardware architecture for single-phase motors and multi-phase combined drives, reducing the size of the equipment.
- Excellent electrical characteristics: The device features extremely low input capacitance and minimal switching delay, supporting precise dead-time control to effectively prevent the risk of bridge arm short-circuiting, whilst reducing switching harmonic interference and enhancing motor operational stability; the 100 V voltage rating is suitable for mainstream low-voltage power supply scenarios such as low-voltage new energy systems and industrial low-voltage servo applications.
- High flexibility and scalability: It can be used as a single chip for single-phase motor drives, or three chips can be combined to build a three-phase motor drive system, meeting the requirements for low-power, lightweight, multi-channel motor drives, with design flexibility far exceeding that of traditional discrete solutions.
3. Typical Application Scenarios
Primarily suited to low-voltage high-speed motors, precision servo motors, small robotic actuators, portable power tools, automotive low-voltage motors and auxiliary motors for small drones, whilst also suitable for derivative motor control systems such as high-frequency power conversion and active rectification.
IV. Comparison of TI’s Two Categories of GaN Motor Driver Products
GaN smart power modules offer the core advantage of an integrated three-phase driver, featuring the highest level of integration, the simplest peripheral circuitry and enhanced reliability. They are primarily targeted at medium- to high-voltage, medium- to high-power three-phase motor applications and are suitable for home appliances, industrial equipment and high-power smart equipment where rapid mass production, high stability and low R&D costs are prioritised.
GaN half-bridge drivers feature flexible architecture and excellent high-frequency performance as their key highlights. They are primarily designed for low-voltage, small-to-medium power and multi-configuration drive scenarios, and are suitable for precision equipment, portable tools and small robots that require flexible configuration, ultra-high control accuracy, and lightweight, compact designs.
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