Mingjiada’s Power LDMOS Transistor Product Range: Full Series Coverage and Analysis of Typical Applications
Company Profile
Established in 1996, Shenzhen Mingjiada Electronics Co., Ltd. is a globally renowned authorised independent distributor of electronic components. Headquartered in the Electronic Business Centre of Futian District, Shenzhen, the company maintains branches in Hong Kong, Japan, Russia and Taiwan, and has obtained ISO 9001:2014 international quality management system certification and ISO 14001:2014 environmental management system certification. Mingjiada Electronics has established partnerships with over 500 renowned global brands and has long specialised in the fields of wireless communications and power semiconductors. Its business portfolio encompasses wireless SoCs, gallium nitride (GaN) transistors, RF LDMOS power transistors and various microcontroller (MCU) evaluation boards.
In terms of power LDMOS transistor supply, Mingjiada Electronics provides a long-term, stable supply of RF power LDMOS transistors from leading international brands such as NXP (NXP Semiconductors/Freescale), ST (STMicroelectronics) and Ampleon. These products are widely used in mobile communication base stations, broadcast transmitters, industrial, scientific and medical (ISM) applications, radar systems and the aerospace sector.
I. NXP/Freescale Airfast® Series LDMOS RF Power Transistors
NXP’s Airfast® series is a key LDMOS product line supplied by Mingjiada Electronics, covering the requirements of broadband RF applications ranging from low to high frequencies.
1. AFT23H160-25SR3
The AFT23H160-25SR3 is a 32W asymmetric Doherty LDMOS RF power transistor, specifically designed for mobile communications base station applications in the 2300 to 2400 MHz frequency range. Housed in an NI-880X-4L4S-8 package, this device features an advanced, high-performance in-package Doherty architecture. Its wider negative gate-source voltage range improves Class C operating performance and is specifically optimised for digital pre-distortion error correction systems.
2. A2T27S020GNR1
The A2T27S020GNR1 is a 2.5 W RF power LDMOS transistor covering a wide frequency range from 400 to 2700 MHz, with a typical gain of up to 21 dB, housed in a TO-270G-2 package. The device’s excellent linear performance and thermal stability make it an ideal choice for 4G/5G base station power amplifiers, wireless access points, microwave link equipment and satellite communication systems.
3. AFT26H200W03SR6
The AFT26H200W03SR6 is a 45W asymmetric Doherty RF power LDMOS transistor designed for cellular base station applications in the 2496 to 2690 MHz frequency range, offering very wide instantaneous bandwidth capability.
II. ST (STMicroelectronics) RF LDMOS Power Transistors
STMicroelectronics offers a comprehensive portfolio of RF LDMOS transistors with operating voltages ranging from 7 V to 50 V, targeting applications across the 1 MHz to 4 GHz frequency range, characterised by high peak power handling (>1 kW) and high stability. Mingjiada Electronics distributes ST’s full range of RF DMOS and LDMOS transistor products.
1. RF5L051K5CB4
The RF5L051K5CB4 is a high-performance RF power LDMOS transistor launched by STMicroelectronics, delivering an output power of up to 1,500 W, operating at 50 V, and covering a frequency range from HF to 500 MHz. At 108 MHz, it achieves a typical gain of 22 dB and an efficiency of up to 80 per cent, and is housed in a D4E package. The device incorporates ESD protection (compliant with ANSI/ESDA/JEDEC standards), offers excellent thermal stability and shock resistance, and has a typical junction-to-case thermal resistance of just 0.09 °C/W.
This device is widely used in FM radio transmitters, VHF television broadcasting, terrestrial communications equipment (30–88 MHz and 136–174 MHz bands), shortwave HF transceivers, plasma generators, particle accelerators, industrial heating and ISM applications, as well as high-reliability aerospace RF amplifier modules.
III. Ampleon LDMOS RF Power Transistors
Ampleon, formerly the RF Power business unit of NXP, has been a leader in the RF power sector for over 50 years. Mingjiada Electronics maintains a long-term stock of various Ampleon LDMOS RF power transistors designed for base station and industrial applications, all guaranteed to be genuine original products.
1. BLC10G22XS-301AVT
The BLC10G22XS-301AVT is a 300W LDMOS packaged asymmetric Doherty power transistor, specifically designed for base station applications in the 2110MHz to 2170MHz frequency band. This device offers exceptional robustness, high efficiency and low thermal resistance, with lower output capacitance for improved performance in Doherty applications, and features integrated ESD protection.
2. BLF8G22LS-270GV
The BLF8G22LS-270GV is a 270W LDMOS power transistor with enhanced video bandwidth characteristics (typically 80MHz), suitable for base station RF power amplifiers and multi-carrier applications in the 2110MHz to 2170MHz frequency band. This device also offers high efficiency, low thermal resistance and excellent pre-distortion capability.
IV. Key Application Areas
The power LDMOS transistors supplied by Mingjiada Electronics cover the following core application areas:
Mobile communication base stations: Suitable for RF power amplifiers in 4G LTE and 5G NR base stations, including macro base stations, micro base stations and multi-carrier applications, meeting the requirements of modern mobile broadband communications for high power, high efficiency and excellent linearity.
Broadcast Transmission Systems: Covering FM radio transmitters and VHF television broadcast transmitters, providing highly reliable RF power amplifier solutions for the broadcasting industry.
Industrial, Scientific and Medical (ISM): Including plasma generators, particle accelerators, CO₂ lasers, MRI systems, RF heating and defrosting equipment, and industrial welding and drying systems.
Radar and Aerospace: LDMOS technology is widely used in avionics, civil and military radar systems, repeaters, and transceivers for high-speed wireless computer networks (Wi-Fi and WiMAX standards).
Satellite and Terrestrial Communications: This includes shortwave (HF) transceivers, terrestrial communications equipment (30–88 MHz and 136–174 MHz bands), and signal transmission and amplification in satellite communications systems.
V. Mingjiada’s Supply Advantages
Mingjiada Electronics possesses the following core advantages in the supply of power LDMOS transistors: Firstly, extensive brand coverage, supplying the full range of products from leading global LDMOS manufacturers such as NXP, ST and Ampleon; secondly, a guarantee of genuine, brand-new products, as the company has obtained ISO 9001:2014 international quality standard certification, ensuring that all products are brand-new and genuine; Thirdly, ample stock availability: we maintain long-term stock of all mainstream models to support rapid delivery.
For further information on LDMOS transistor models or to request a quotation, please contact Mingjiada Electronics:
Mobile: +86 13410018555 (Mr Chen)
Email: sales@hkmjd.com
Website: www.integrated-ic.com
Address: Rooms 1239–1241, New Asia Guoli Building, Zhenzhong Road, Futian District, Shenzhen
Người liên hệ: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753